EFA025A-70 Datasheet, PDF (1/2 Pages) List of Unclassifed Manufacturers – Low Distortion GaAs Power FET

Excelics
EFA025A-70
DATA SHEET
Low Distortion GaAs Power FET
• NON-HERMETIC LOW COST CERAMIC 70mil PACKAGE
• +20.0dBm TYPICAL OUTPUT POWER




• 10.0dB TYPICAL POWER GAIN AT 12GHz
'
• TYPICAL 1.5dB NOISE FIGURE AND 10dB ASSOCIATED
GAIN AT 12GHz
• 0.3 X 250 MICRON RECESSED “MUSHROOM” GATE
6
6
• Si₃N₄ PASSIVATION
• ADVANCED EPITAXIAL DOPING PROFILE
*
PROVIDES HIGH POWER EFFICIENCY,
LINEARITY AND RELIABILITY
All Dimensions In mils.
ELECTRICAL CHARACTERISTICS (T_a = 25 ^OC)
SYMBOLS
PARAMETERS/TEST CONDITIONS
P_1dB Output Power at 1dB Compression
Vds=6V, Ids=50% Idss
f=12GHz
f=18GHz
G_1dB Gain at 1dB Compression
Vds=6V, Ids=50% Idss
f=12GHz
f=18GHz
PAE Power Added Efficiency at 1dB Compression
Vds=6V, Ids=50% Idss
f=12GHz
NF Noise Figure Vds=3V,Ids=15mA
f=12GHz
GA Associated Gain Vds=3V,Ids=15mA f=12GHz
Idss Saturated Drain Current Vds=3V, Vgs=0V
Gm Transconductance
Vds=3V, Vgs=0V
Vp Pinch-off Voltage
Vds=3V, Ids=1.0 mA
BVgd Drain Breakdown Voltage Igd=1.0mA
BVgs Source Breakdown Voltage Igs=1.0mA
Rth Thermal Resistance
* Overall Rth depends on case mounting.
MIN
17
8.5
35
30
-10
-6
TYP
20
20
10
7
35
1.5
10
65
40
-2
-15
-14
370^*
MAX UNIT
dBm
dB
%
dB
dB
105
mA
mS
-3.5
V
V
V
o_C/W
MAXIMUM RATINGS AT 25^OC
SYMBOLS PARAMETERS
ABSOLUTE¹ CONTINUOUS²
Vds
Drain-Source Voltage
10V
6V
Vgs
Gate-Source Voltage
-6V
-4V
Ids
Drain Current
Idss
52mA
Igsf
Forward Gate Current
6mA
1mA
Pin
Input Power
20dBm
@ 3dB Compression
Tch
Channel Temperature
175^oC
150 ^oC
Tstg
Storage Temperature
-65/175^oC
-65/150 ^oC
Pt
Total Power Dissipation
370mW
310mW
Note: 1 Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
Phone: [phone] Fax: [phone] Web Site: www.excelics.com