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EE-SX198 Datasheet, PDF (1/2 Pages) List of Unclassifed Manufacturers – Photomicrosensor (Transmissive)
Photomicrosensor (Transmissive)
EE-SX198
■ Dimensions
Note: All units are in millimeters unless otherwise indicated.
12.2±0.3
5±0.1
0.5±0.1
8.5±0.1
10±0.2
6.2±0.5
Cross section BB
Four, C0.3
Two, C1±0.3
Optical
axis
6.5+0.1
9.2±0.3
Four, 0.25±0.1
Four, 0.5±0.1
2.5±0.1
Cross section AA
Internal Circuit
K
C
A
E
Terminal No. Name
A
Anode
K
Cathode
C
Collector
E
Emitter
Unless otherwise specified,
the tolerances are ±0.2 mm.
■ Features
• General-purpose model with a 3-mm-wide slot.
• PCB mounting type.
• High resolution with a 0.5-mm-wide aperture.
■ Absolute Maximum Ratings (Ta = 25°C)
Emitter
Item
Forward current
Detector
Ambient tem-
perature
Pulse forward cur-
rent
Reverse voltage
Collector–Emitter
voltage
Emitter–Collector
voltage
Collector current
Collector dissipa-
tion
Operating
Storage
Soldering temperature
Symbol
IF
IFP
VR
VCEO
VECO
IC
PC
Topr
Tstg
Tsol
Rated value
50 mA
(see note 1)
1A
(see note 2)
4V
30 V
---
20 mA
100 mW
(see note 1)
–25°C to 85°C
–30°C to
100°C
260°C
(see note 3)
Note: 1. Refer to the temperature rating chart if the ambient temper-
ature exceeds 25°C.
2. The pulse width is 10 ms maximum with a frequency of 100
Hz.
3. Complete soldering within 10 seconds.
■ Electrical and Optical Characteristics (Ta = 25°C)
Emitter
Detector
Rising time
Falling time
Item
Symbol
Forward voltage
Reverse current
Peak emission wavelength
Light current
Dark current
Leakage current
Collector–Emitter saturated volt-
age
VF
IR
lP
IL
ID
ILEAK
VCE (sat)
Peak spectral sensitivity wave- lP
length
tr
tf
Value
1.2 V typ., 1.4 V max.
0.01 mA typ., 10 mA max.
940 nm typ.
0.5 mA min., 14 mA max.
2 nA typ., 200 nA max.
---
0.1 V typ., 0.4 V max.
850 nm typ.
4 ms typ.
4 ms typ.
Condition
IF = 30 mA
VR = 4 V
IF = 20 mA
IF = 20 mA, VCE = 5 V
VCE = 20 V, 0 lx
---
IF = 40 mA, IL = 0.5 mA
VCE = 10 V
VCC = 5 V, RL = 100 W, IL = 5 mA
VCC = 5 V, RL = 100 W, IL = 5 mA
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EE-SX198 Photomicrosensor (Transmissive)