EE-SX1103 Datasheet, PDF (1/2 Pages) List of Unclassifed Manufacturers – Photomicrosensor (Transmissive)

Photomicrosensor (Transmissive)
EE-SX1103
■ Dimensions
Note: All units are in millimeters unless otherwise indicated.
Two, C0.5
Four, 0.5
dia. _{5 min.}
Internal Circuit
Optical
axis
Two, C0.3
Four, 0.2
■ Features
• Ultra-compact with a sensor width of 5 mm and a slot width of
2 mm.
• PCB mounting type.
• High resolution with a 0.4-mm-wide aperture.
■ Absolute Maximum Ratings (Ta = 25°C)
Gate
Emitter
Item
Forward current
Symbol Rated value
I_F
50 mA
(see note 1)
Pulse forward cur- I_FP
---
rent
Reverse voltage
V_R
5V
Detector
Collector–Emitter V_CEO
voltage
30 V
Emitter–Collector V_ECO
voltage
4.5 V
Collector current I_C
30 mA
Collector dissipa- P_C
tion
80 mW
(see note 1)
Ambient tem- Operating
perature
Storage
Topr
–25°C to 85°C
Tstg
–30°C to 100°C
Soldering temperature
Tsol
260°C
(see note 2)
Terminal No.
A
K
C
E
Name
Anode
Cathode
Collector
Emitter
Unless otherwise specified, the
tolerances are ±0.2 mm.
Note: 1. Refer to the temperature rating chart if the ambient temper-
ature exceeds 25°C.
2. Complete soldering within 3 seconds.
■ Electrical and Optical Characteristics (Ta = 25°C)
Emitter
Detector
Rising time
Item
Forward voltage
Reverse current
Peak emission wavelength
Light current
Dark current
Leakage current
Collector–Emitter saturated volt-
age
Peak spectral sensitivity wave-
length
Symbol
V_F
I_R
l_P
I_L
I_D
I_LEAK
V_CE (sat)
l_P
tr
Value
1.3 V typ., 1.6 V max.
10 mA max.
950 nm typ.
0.5 mA min.
500 nA max.
---
0.4 V max.
800 nm typ.
10 ms typ.
Falling time
tf
10 ms typ.
Condition
I_F = 50 mA
V_R = 5 V
I_F = 50 mA
I_F = 20 mA, V_CE = 5 V
V_CE = 10 V, 0 lx
---
I_F = 20 mA, I_L = 0.3 mA
V_CE = 5 V
V_CC = 5 V, R_L = 100 W,
I_F = 20 mA
V_CC = 5 V, R_L = 100 W,
I_F = 20 mA
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EE-SX1103 Photomicrosensor (Transmissive)