DU28120V Datasheet, PDF (1/3 Pages) List of Unclassifed Manufacturers – RF MOSFET POWER TRANSISTOR 120W 28V 2-175 MHZ

RF MOSFET Power Transistor, 12OW, 28V
2 - 175 MHz
DU2812OV
Features
l N-Channel Enhancement Mode Device
l DMOS Structure
l Lower Capacitances for Broadband Operation
l High Saturated Output Power
l Lower Noise Figure Than Competitive Devices
..
Absolute Maximum Ratings at 25°C
Electrical Characteristics
Parameter
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
Gate Threshold Voltage
ForwardTransconductance
Input Capacitance
Output Capacitance
Reverse Capacitance
Power Gain
Drain Efficiency
Return Loss
Load Mismatch Tolerance
L
* Per side
at 25°C
Symbol
BV,,,
’05s
‘GSS
V
GSfW
GM
C _ISS
C _oss
C _Rss
GP
‘1D
5
VSWR-T
Min Max Units
Test Conditions
65
-
V
V,,=O.O V, l,s=30.0 mA’
6.0
mA V,,=28.0 v, v,,=o.o V’
6.0
pA v,,=20.0 v, v,,=o.o V’
2.0
6.0
V
V,,=lO.O V, 1,,=600.0 mA’
3.0
-
S
V,,=lO.O V, 1,,=6000.0 A, AV,,=l .O V, 80 us Pulse’
270
pF V,,=28.0 V, F=l .O MHz’
240
pF V,,=28.0 V, F=l .O MHz’
48
PF ^{V,,=28.0 V, F=l .O MHz’}
13
-
dB V,,=28.0 V, I,,=600 mA, P,,,=120.0 W, F=175 MHz
60
-
% V,,=28.0 V, I,,=600 mA, P,,fl20.0 W, F=l7.5 MHz
10
-
% V,,=28.0 V, I,,=600 mA, P,,,=120.0 W, F=175 MHz
-
3O:l
- V,,=28.0 V, I,,=600 mA, P,e120.0 W, F=175 MHz
Specifications Subject to Change Without Notke.
MIA-COM, Inc.
North America:
Tel. [phone]
Fax [phone]
D Asia/Pacific:
Tel. [phone]
Fax [phone]
Europe: Tel. [phone]
Fax [phone]