DL-100-7-KERSMD Datasheet, PDF (1/2 Pages) List of Unclassifed Manufacturers – Position Sensing Photodiodes Special characteristics

DL-100-7-KER SMD
Position Sensing
Photodiodes
Special characteristics:
dual-axis, duo-lateral PSD
active area 10 x 10 mm
high position resolution and
high linearity
Parameters:
active area
Dark current
at 10 V
Capacitance
at 10 V, 100 kHz
Spectral responsivity
at 633 nm
at 850 nm
Interelectrode resistance
at E = 0 lx
Rise time
at 10 V, 50 Ω, 865 nm
Noise limited resolution
at 632 nm, 0.5 µW
Position Detection Error ¹⁾
at 632 nm
Breakdown voltage
Package
Operating temperature
Storage temperature
1) measurement conditions:
Spot size: 0,5 mm,
Scan Interval: 1 mm
Wavelength: 633 nm
DL-100-7-KER SMD
10 x 10 mm
100 mm²
max. 300 nA
typ. 80 nA
typ. 75 pF
typ. 0,4 A/W
typ. 0,62 A/W
typ. 12 kΩ
typ. 4 µs
0.2 µm
+/- 1%
typ. 30 V
Ceramic S.M.
-20 ... +70°C
-60 ... +100°C
Package 22 (SMD)
10.16
15.24
1.6
ANODE 1
CATHODE 2
(2.54)
Chip: DL-100-7
Active area:
(10 x 10) mm²
CATHODE 1 ANODE 2
21.0 ± 0.2
SMD - Kontaktrückseite
1.6
SMD - back contact
www.silicon-sensor.com
Version: 02-09-06
www.pacific-sensor.com