DC9012 Datasheet, PDF (1/1 Pages) List of Unclassifed Manufacturers – TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR

DC COMPONENTS CO., LTD.
R
DISCRETE SEMICONDUCTORS
DC9012
TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR
Description
Designed for use in 1W output amplifier of portable
redios in class B push-pull operation.
Pinning
1 = Emitter
2 = Base
3 = Collector
Absolute Maximum Ratings(TA=25^oC)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
IB
PD
TJ
TSTG
Rating Unit
-40
V
-20
V
-5
V
-500
mA
-100
mA
625
mW
+150
o_C
-55 to +150 ^oC
TO-92
.190(4.83)
.170(4.33)
.190(4.83)
.170(4.33)
.500
(12.70)
Min
2^o Typ
2^o Typ
.050
(1.27)Typ
.022(0.56)
.014(0.36)
.100
(2.54)
Typ
.022(0.56)
.014(0.36)
321
.148(3.76)
.132(3.36)
.050
5^oTyp. 5^oTyp. (1.27)Typ
Dimensions in inches and (millimeters)
Electrical Characteristics
(Ratings at 25^oC ambient temperature unless otherwise specified)
Characteristic
Symbol Min
Typ
Max
Collector-Base Breakdown Volatge
BVCBO -40
-
-
Collector-Emitter Breakdown Voltage BVCEO -20
-
-
Emitter-Base Breakdown Volatge
BVEBO
-5
-
-
Collector Cutoff Current
ICBO
-
-
-0.1
Emitter Cutoff Current
IEBO
-
Collector-Emitter Saturation Voltage⁽¹⁾ VCE(sat)
-
Base-Emitter Saturation Voltage⁽¹⁾
VBE(sat)
-
Base-Emitter On Voltage⁽¹⁾
VBE(on)
-
-
-0.1
-
-0.6
-
-1.2
-
-0.9
DC Current Gain⁽¹⁾
hFE1
64
hFE2
40
-
300
-
-
Transition Frequency
fT
100
-
-
Output Capacitance
Cob
-
(1)Pulse Test: Pulse Width 380µs, Duty Cycle 2%
-
8
Unit
V
V
V
µA
µA
V
V
V
-
-
MHz
pF
Test Conditions
IC=-100µA, IE=0
IC=-1mA, IB=0
IE=-100µA, IC=0
VCB=-25V, IE=0
VEB=-3V, IC=0
IC=-500mA, IB=-50mA
IC=-500mA, IB=-50mA
IC=-10mA, VCE=-1V
IC=-50mA, VCE=-1V
IC=-500mA, VCE=-1V
IC=-10mA, VCE=-1V, f=100MHz
VCB=-10V, f=1MHz
Classification of hFE1
Rank
D
E
Range
64~91
78~112
F
96~135
G
112~166
H
144~202
I
176~300
I1
176~246
I2
214~300