CMT60N03 Datasheet, PDF (1/8 Pages) List of Unclassifed Manufacturers – N CHANNEL LOGIC LEVEL POWER MOSFET

APPLICATION
Buck Converter High Side Switch
Other Applications
V_DSS
30V
R_DS(ON) Typ.
10.8mΩ
PIN CONFIGURATION
TO-252
Front View
TO-263
Front View
CMT60N03
N-CHANNEL Logic Level Power MOSFET
FEATURES
Low ON Resistance
Low Gate Charge
Peak Current vs Pulse Width Curve
I_D
Inductive Switching Curves
50A
Improved UIS Ruggedness
SYMBOL
D
G
12 3
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
Rating
Drain to Source Voltage (Note 1)
Drain to Current
Continuous Tc = 25 , V_GS@10V (Note 2)
Continuous Tc = 100 , V_GS@10V (Note 2)
Pulsed Tc = 25 , V_GS@10V (Note 3)
Gate-to-Source Voltage Continue
Total Power Dissipation
Derating Factor above 25
Peak Diode Recovery dv/dt (Note 4)
Operating Junction and Storage Temperature Range
Single Pulse Avalanche Energy L=1.1mH,I_D=30 Amps
Maximum Lead Temperature for Soldering Purposes
Maximum Package Body for 10 seconds
Pulsed Avalanche Rating
Symbol
V_DSS
I_D
I_D
I_DM
V_GS
P_D
dv/dt
T_J, T_STG
E_AS
T_L
T_PKG
I_AS
Value
30
50
Fig.3
Fig.6
±20
52
0.5
3.0
-55 to 150
500
300
260
Fig.8
Unit
V
A
V
W
W/
V/ns
mJ
THERMAL RESISTANCE
Symbol
Parameter
R_θJC
Junction-to-case
Min Typ
R_θJA
Junction-to-ambient
(PCB Mount)
R_θJA
Junction-to-ambient
Max
2.4
50
62
Units
/W
/W
/W
Test Conditions
Water cooled heatsink, P_D adjusted for a peak junction
temperature of +150
Minimum pad area, 2-oz copper, FR-4 circuit board, double
sided
1 cubic foot chamber, free air
2004/05/24 Preliminary
Champion Microelectronic Corporation
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