CMT2N7002E Datasheet, PDF (1/6 Pages) List of Unclassifed Manufacturers – CMT2N7002E

CMT2N7002E
SMALL SIGNAL MOSFET
GENERAL DESCRIPTION
FEATURES
This N-Channel enhancement mode field effect transistor is
produced using high cell density, DMOS technology. These
products have been designed to minimize on-state
resistance while provide rugged, reliable, and fast switching
performance. This product is particularly suited for low
voltage, low current applications such as small servo motor
control, power MOSFET gate drivers, and other switching
applications.
Low On-Resistance: 3Ω
Low Threshold: 2V (typ.)
Low Input Capacitance: 25pF
Fast Switching Speed: 7.5ns
Low Input and Output Leakage
PIN CONFIGURATION
SOT-23
Top View
3
SYMBOL
D
1
2
ORDERING INFORMATION
Part Number
CMT2N7002E
CMT2N7002EG*
*Note: G : Suffix for Pb Free Product
Package
SOT-23
SOT-23
ABSOLUTE MAXIMUM RATINGS
Rating
Drain Source Voltage
Drain-Gate Voltage (R_GS = 1.0MΩ)
Continuous Drain Current (T_J = 150 )
T_A = 25
T_A = 70
Pulsed Drain Current (Note 1)
Gate-to-Source Voltage
Total Power Dissipation
T_A = 25
T_A = 70
Operating and Storage Temperature Range
Thermal Resistance Junction to Ambient
Note1: Pulse Width limited by maximum junction temperature.
G
S
N-Channel MOSFET
Symbol
V_DSS
V_DGR
I_D
I_DM
V_GS
P_D
T_J, T_STG
θ_JA
Value
60
60
240
190
1300
±20
0.35
0.22
-55 to 150
357
Unit
V
V
mA
mA
V
W
/W
2004/11/05 Preliminary Rev. 2
Champion Microelectronic Corporation
Page 1