CMT2301 Datasheet, PDF (1/7 Pages) List of Unclassifed Manufacturers – CMT2301

CMT2301
P-CHANNEL ENHANCEMENT MODE MOSFET
GENERAL DESCRIPTION
FEATURES
The CMT2301 is the P-Channel logic enhancement mode
power field effect transistors are produced using high cell
density, DMOS trench technology.
This high density process is especially tailored to minimize
on-state resistance.
These devices are particularly suited for low voltage
application such as cellular phone and notebook computer
power management and other battery powered circuits, and
low in-line power loss are needed in a very small outline
surface mount package.
APPLICATIONS
-20V/-2.3A ,R_DS(ON)=130 mΩ@VGS=-4.5V
-20V/-1.9A ,R_DS(ON)=190 mΩ@VGS=-2.5V
Super high density cell design for extremely low R_DS(ON)
Exceptional on-resistance and maximum DC current
capability
SOT-23-3 package design
Power Management in Notebook
Portable Equipment
Battery Powered System
DC/DC Converter
Load Switch
DSC
LCD Display inverter
PIN CONFIGURATION
SOT-23-3
Top View
3
SYMBOL
D
G
1
2
ORDERING INFORMATION
Part Number
CMT2301M233
CMT2301GM233*
*Note: G : Suffix for Pb Free Product
Package
SOT-23-3
SOT-23-3
S
P-Channel MOSFET
2005/01/05
Champion Microelectronic Corporation
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