CMT04N60 Datasheet, PDF (1/7 Pages) List of Unclassifed Manufacturers – POWER MOSFET

CMT04N60
POWER MOSFET
GENERAL DESCRIPTION
FEATURES
This advanced high voltage MOSFET is designed to
! Higher Current Rating
withstand high energy in the avalanche mode and switch ! Lower Rds(on)
efficiently. This new high energy device also offers a
! Lower Capacitances
drain-to-source diode with fast recovery time. Designed for ! Lower Total Gate Charge
high voltage, high speed switching applications such as
! Tighter VSD Specifications
power supplies, converters, power motor controls and
! Avalanche Energy Specified
bridge circuits.
PIN CONFIGURATION
TO-220/TO-220FP
Top View
SYMBOL
D
12 3
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
Rating
Drain to Current － Continuous
－ Pulsed
Gate-to-Source Voltage － Continue
－ Non-repetitive
Total Power Dissipation
TO-220
TO-220FP
Operating and Storage Temperature Range
Single Pulse Drain-to-Source Avalanche Energy － TJ = 25℃
(VDD = 100V, VGS = 10V, IL = 4A, L = 10mH, RG = 25Ω)
Thermal Resistance － Junction to Case
－ Junction to Ambient
Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds
Symbol
ID
IDM
VGS
VGSM
PD
TJ, TSTG
EAS
θJC
θJA
TL
Value
4.0
14
±20
±40
96
38
-55 to 150
80
1.30
100
260
Unit
A
V
V
W
℃
mJ
℃/W
℃
2003/06/25 Preliminary Rev. 1.1 Champion Microelectronic Corporation
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