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CMMT495 Datasheet, PDF (1/3 Pages) List of Unclassifed Manufacturers – NPN SILICON PLANAR EPITAXIAL TRANSISTOR
Continental Device India Limited
An ISO/TS16949 and ISO 9001 Certified Company
NPN SILICON PLANAR EPITAXIAL TRANSISTOR
PIN CONFIGURATION (NPN)
1 = BASE
2 = EM ITTER
3 = COLLECTOR
3
CMMT495
SOT-23
Formed SMD Package
1
2
Marking Code is =495
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current Continuous
Collector Current Peak
Base Current
Power Dissipation @ Ta=25ºC
Operating And Storage Junction
Temperature Range
SYMBOL
VCBO
VCEO
VEBO
IC
ICM
IB
PD
Tj, Tstg
VALUE
170
150
5
1
2
200
500
- 55 to +150
Electrical Characterstics (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
CONDITIONS
MIN
Collector Base Voltage
Collector Emitter Voltage
VCBO
*VCEO(sus)
IC=100µA, IE=0
170
IC=10mA, IB=0
150
Emitter Base Voltage
VEBO
IE=100µA, IC=0
5
Collector Cut Off Current
ICBO
VCB=150V, IE=0
Collector Cut Off Current
ICES
VCE=150V, VBE=0
Emitter Cut Off Current
Collector Emitter Saturation
Voltage
IEBO
*VCE(sat)
VEB=4V, IC=0
IC=250mA, IB=25mA
IC=500mA, IB=50mA
Base Emitter Saturation Voltage *VBE(sat)
IC=500mA, IB=50mA
Base Emitter On Voltage
DC Current Gain
Transition Frequency
Output Capacitance
*VBE(on)
hFE
fT
Cobo
VCE =10V, IC=500mA
VCE =10V, IC=1mA
100
*VCE =10V, IC=250mA
100
*VCE =10V, IC=500mA
50
VCE =10V, IC=1A
10
VCE=10V, IC=50mA, f=100MHz 100
VCB=10V, f=1MHz
*Pulse Test: Pulse Width =300 µs, Duty Cycle <2%
UNITS
V
V
V
A
A
mA
mW
ºC
TYP
MAX
100
100
100
0.2
0.3
1.0
1.0
UNIT
V
V
V
nA
nA
nA
V
V
V
V
300
MHz
10
pF
Continental Device India Limited
Data Sheet
Page 1 of 3
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