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| CLA101 Datasheet, PDF (1/1 Pages) List of Unclassifed Manufacturers – Four Channel Phototransistor Array | |||
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CLA101
Four Channel Phototransistor Array
® Clairex
Technologies, Inc.
September, 2001
0.280 (7.11)
0.270 (6.86)
B
D
0.005 (0.13) nom.
A
D
0.180 (4.57)
0.170 (4.32)
0.050 (1.27) max
COMMON
=
0.250 (6.35) min.
=
0.100 (2.54) typ.
A
C COMMON
ALL DIMENSIONS ARE IN INCHES (MILLIMETERS)
ALL DIMENSIONS ARE IN INCHES (MILCLaIMsEeT1E9RS)
ABCD
features
⢠Full range of sensor chips
⢠Full range of emitter chips
⢠Miniature surface mountable
package
description
The CLA101 four channel
phototransistor array can be custom
designed with photodiode or photo-
IC chips. An emitter version is also
available using same wavelength or
different wavelength die. For
additional information, call Clairex.
absolute maximum ratings (TA = 25°C unless otherwise stated)
storage temperature.......................................................................... -40°C to +100°C
operating temperature ..................................................................... -40°C to +100°C
lead soldering temperature(1) ............................................................................ 260°C
maximum continuous current(2).......................................................................... 50mA
peak forward current (1.0ms pulse width, 10% duty cycle) .................................... 1A
reverse voltage ....................................................................................................... 5V
continuous power dissipation(3)......................................................................... 75mW
notes:
1. At the base of the header for 5 seconds maximum.
2. Derate linearly 0.53mA/°C from 25°C free air temperature to TA = +100°C.
3. Derate linearly 0.80mW/°C from 25°C free air temperature to TA = +100°C.
electrical characteristics (TA = 25°C unless otherwise noted)
symbol parameter
min typ max units test conditions
IL
Light current(4)
150 -
-
µA Ee=1mW/cm2, VCE=5V
Matching factor
-
-
0.4
-
(ILHIGH-ILLOW)/ILHIGH
ID
Dark current
-
-
100 nA VCE = 10V, H=0
V(BR)CEO Collector-emitter breakdown voltage
40
-
-
V ICE = 0.1mA
V(BR)ECO Emitter-collector breakdown voltage
VCE(SAT) Collector-emitter saturation voltage
5.0
-
-
V IEC = 0.1mA
-
-
0.4
V Ee=20mW/cm2, ICE=.5mA
tr, tf
Rise and fall times
-
3.0
-
µs RL=100â¦, VCE= 5V
Note: 4. Radiation source for light current testing is tungsten at 2854°K.
Clairex reserves the right to make changes at any time to improve design and to provide the best possible product.
Revised 3/15/06
Clairex Technologies, Inc.
Phone: 972-265-4900
1301 East Plano Parkway
Fax: 972-265-4949
Plano, Texas 75074-8524
www.clairex.com
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