BUZ900DP Datasheet, PDF (1/3 Pages) List of Unclassifed Manufacturers – N-CHANNEL POWER MOSFET

MAGNA
TEC
MECHANICAL DATA
Dimensions in mm
20.0
3.3 Dia.
BUZ900DP
BUZ901DP
N–CHANNEL
POWER MOSFET
5.0
POWER MOSFETS FOR
AUDIO APPLICATIONS
123
2.0
3.4
1.0
2.0
1.2
5.45 5.45
TO–3PBL
Pin 1 – Gate
Pin 2 – Source
Case is Source
0.6
2.8
Pin 3 – Drain
FEATURES
• HIGH SPEED SWITCHING
• N–CHANNEL POWER MOSFET
• SEMEFAB DESIGNED AND DIFFUSED
• HIGH VOLTAGE (160V & 200V)
• HIGH ENERGY RATING
• ENHANCEMENT MODE
• INTEGRAL PROTECTION DIODE
• P–CHANNEL ALSO AVAILABLE AS
BUZ905DP & BUZ906DP
• DOUBLE DIE PACKAGE FOR MAXIMUM
POWER AND HEATSINK SPACE
ABSOLUTE MAXIMUM RATINGS
(T_case = 25°C unless otherwise stated)
V_DSX
Drain – Source Voltage
V_GSS
Gate – Source Voltage
I_D
Continuous Drain Current
I_D(PK)
Body Drain Diode
P_D
Total Power Dissipation
@ T_case = 25°C
T_stg
Storage Temperature Range
T_j
Maximum Operating Junction Temperature
R_θJC
Thermal Resistance Junction – Case
BUZ900DP
160V
BUZ901DP
200V
±14V
16A
16A
250W
–55 to 150°C
150°C
0.5°C/W
Magnatec. Telephone [phone]. Telex: 341927. Fax [phone].
Prelim. 2/95