BUZ50A Datasheet, PDF (1/2 Pages) Siemens Semiconductor Group – SIPMOS Power Transistor (N channel Enhancement mode)

PRODUCT SPECIFICATIONS
SEMICONDUCTOR TECHNOLOGY, INC.
3131 S. E. JAY STREET, STUART, FL 34997
PH: [phone] FAX: [phone]
Website: http://www.semi-tech-inc.com
CASE OUTLINE: TO-220AB
HIGH VOLTAGE POWER MOSFET
N-CHANNEL
ABSOLUTE MAXIMUM RATING:
Drain – Source Voltage
Drain – Gate Voltage
Drain Current – Continuous
Drain Current – Pulsed
Gate – Source Voltage
Power Dissipation
Inductive Current
Operating and Storage Temperature
Lead Temperature From Case
VDSS
VDGR
ID
ID _M
VGS
PD
IL
TJ & Tstg
TL
ELECTRICAL CHARACTERISTICS TA @ 25°C
Parameters
Symbol Test Conditions
Drain Source
Breakdown Voltage
BVDSS V_GS = 0V, I_D = .25mA
Gate Threshold Voltage VGS(th) V_DS = V_GS, I_D = 1.0mA
Gate – Body Leakage
Current
Zero Gate Voltage
Drain Current
On State Drain Current
IGSS
IDSS
ID(on)
V_GS = ± 20V, V_DS = 0V
V_DS = 1000V, V_GS = 0V,
V_DS = 1000V, V_GS = 0V, T_J = 125°C
Drain Source On-
Resistance
Forward
Transconductance
Drain-Source On
Voltage
Drain-Source-On
Voltage
Input Capacitance
rDS(on) V_GS = 10V, I_D = 1.5A
gFS
V_DS = 25V, I_D = 1.5A
VDS(on)
VDS(on)
Ciss
Output Capacitance
Coss
V_GS = 0V, V_DS = 25V, f = 1 MHz
Reverse Transfer
Capacitance
Crss
TYPE: BUZ50A
1000
1000
2.5
10
±20
75
-55 to +150
Vdc
Vdc
Adc
Adc
Vdc
Watts
Adc
°C
°C
Min Typ Max Unit
1000
Vdc
2.1
4.0 Vdc
100 nA
0.25 mA
1.0 mA
Adc
5.0 Ohms
0.7
mhos
Vdc
Vdc
2100 pF
120 pF
50 pF
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