BSS66 Datasheet, PDF (1/1 Pages) List of Unclassifed Manufacturers – SOT23 NPN SILICON PLANAR MEDIUM POWER SWITCHING TRANSISTORS

SOT23 NPN SILICON PLANAR MEDIUM
POWER SWITCHING TRANSISTORS
ISSUE 2 – SEPTEMBER 1995 7
BSS66
BSS67
PARTMARKING DETAILS —
BSS66 - M6
BSS67 - M7
BSS66R - M8
BSS67R - M9
ABSOLUTE MAXIMUM RATINGS.
E
C
B
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V_CBO
Collector-Emitter Voltage
V_CEO
Emitter-Base Voltage
V_EBO
Peak Pulse Current
I_CM
Continuous Collector Current
I_C
Base Current
I_B
Power Dissipation at T_amb=25°C
P_TOT
Operating and Storage Temperature Range t_j:t_stg
ELECTRICAL CHARACTERISTICS (at T_amb = 25°C).
PARAMETER
SYMBOL MIN. MAX.
60
V
40
V
6
V
200
mA
100
mA
50
mA
330
mW
-55 to +150
°C
UNIT
CONDITIONS.
Collector-Emitter Breakdown Voltage V(BR)CEO
Collector-Base Breakdown Voltage
V(BR)CBO
Emitter-Base Breakdown Voltage
V(BR)EBO
Collector- Emitter Cut-off Current
ICES
Collector-Emitter
Saturation Voltage
VCE(sat)
Base-Emitter Saturation Voltage
VBE(sat)
Static Forward Current BSS66
hFE
Transfer Ratio
Static Forward Current BSS67
hFE
Transfer Ratio
Transition Frequency
BSS66
BSS67
Collector-Base Capacitance
Emitter-Base Capacitance
Noise Figure
fT
Cobo
Cibo
N
40
60
6
50
0.20
0.30
0.65 0.85
0.95
20
35
50
150
30
15
40
70
100 300
60
30
250
300
4
8
Typ. 6
V
V
V
nA
V
V
V
V
MHz
MHz
pF
pF
dB
Switching times: Delay; Rise
td; tf
Storage Time
ts
Fall Time
tf
35
ns
200 ns
50
ns
* Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
IC=1mA
IC=10µA
IE=10µA
VCES=30V
IC=10mA, IB=1mA
IC=50mA, IB=5mA*
I_C=10mA, IB=1mA
IC=50mA, IB=5mA*
IC=100µA,
IC=1mA,
IC=10mA, VCE=1V
IC=50mA*,
IC=100mA*,
IC=100µA,
IC=1mA,
IC=10mA, VCE=1V
IC=50mA*,
IC=100mA*,
IC=10mA, VCE=20V
f=100MHz
VCB=5V, f=100kHz
VEB=0.5V, f=100kHz
IC=100µA, VCE=5V
RS=1kΩ, f=10Hz to15.7 kHz
VCC=3V, IC=10mA
IB1= IB2 =1mA
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