BSP15 Datasheet, PDF (1/1 Pages) List of Unclassifed Manufacturers – SOT223 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR

SOT223 PNP SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
ISSUE 3 – FEBRUARY 1996
FEATURES
* High V_CEO
* Low saturation voltage
COMPLEMENTARY TYPE: – BSP20
PARTMARKING DETAIL: – BSP15
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at T_amb=25°C
Operating and Storage Temperature
Range
SYMBOL
V_CBO
V_CEO
V_EBO
I_CM
I_C
P_tot
T_j:T_stg
BSP15
C
E
C
B
VALUE
-200
-200
-5
-1
-0.5
2
-55 to +150
UNIT
V
V
V
A
A
W
°C
ELECTRICAL CHARACTERISTICS (at T_amb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. MAX. UNIT CONDITIONS.
Collector-Base Breakdown V_(BR)CBO -200
Voltage
V
I_C=-100µA
Collector-Emitter
Breakdown Voltage
V_(BR)CEO -200
V
I_C=-10mA*
Emitter-Base Breakdown
Voltage
V_(BR)EBO -5
V
I_E=-100µA
Collector Cut-Off
I_CBO
Current
-1
µA
V_CB=-175V
Emitter Cut-Off Current
I_EBO
Collector-Emitter Saturation V_CE(sat)
Voltage
Static Forward Current
h_FE
30
Transfer Ratio
-20
µA
- 2.0 V
-0.5 V
150
V_EB=-4V
I_C=-50mA, I_B=-5mA*
I_C=-30mA, I_B=-3mA*
I_C=-50mA, V_CE=-10V*
Transition Frequency
f_T
15
MHz
I_C=-10mA, V_CE=-20V*
f = 20MHz
Output Capacitance
C_obo
15
pF
V_CB=-10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
For typical characteristics graphs see FMMTA92 datasheet.
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