BRF480 Datasheet, PDF (1/6 Pages) List of Unclassifed Manufacturers – MEDIUM POWER SILICON MICROWAVE TRANSISTOR

BIPOLARICS, INC.
Part Number BRF480
MEDIUM POWER SILICON MICROWAVE TRANSISTOR
PRODUCT DATA SHEET
FEATURES:
• High Gain Bandwidth Product
ft = 8 GHz typ @ I_C = 70 mA
• High Gain
|S₂₁|² = 14.2 dB @ 1.0 GHz
8.2 dB @ 2.0 GHz
DESCRIPTION AND APPLICATIONS:
Bipolarics' BRF480 is a high performance silicon bipolar
transistor intended for medium power linear and Class C
applications at VHF, UHF and microwave frequencies in 7.2
and 12V systems. Depending on package type, the BRF480
can operate at up to 0.5W. These applications include high
intermod receivers, CATV and instrumentation amplifiers as
well as pre-drivers, drivers and final stages in transmitter
applications such as cellular telephone. Package options in-
clude Dice, SOT-223 Surface Mount, Ceramic Micro-X,
0.145" Plastic SOT-103 and 0.230" power flange package.
• Dice, Plastic, Hermetic and Surface
Mount packages available
PERFORMANCE DATA:
• Electrical Characteristics (T_A = 25^oC)
Absolute Maximum Ratings:
SYMBOL
PARAMETERS
RATING UNITS
V_CBO
V_CEO
V_EBO
I_C
I_C
T_J
MAX
(1)
T_STG
θJC
Collector-Base Voltage
25
Collector-Emitter Voltage
15
Emitter-Base Voltage
1.5
Collector Current (continuous)
120
Collector Current (instantaneous) 180
Junction Temperature
200
Storage Temperature
-65 to 150
Thermal Resistance
50
V
V
V
mA
mA
o_C
o_C
C/W
(1) Depends on package
SYMBOL
PARAMETERS & CONDITIONS
V_CE = 8V, I_C =60 mA, Class A, unless stated
UNIT
MIN.
TYP. MAX.
f_t
Gain Bandwidth Product
GHz
8.0
|S ₂₁ | ²
Insertion Power Gain:
Micro-X
f = 1.0 GHz
dB
14.2
SOT-103
f = 2.0 GHz
dB
8.2
P_{1d B}
Power output at 1dB compression:
f = 1.0 GHz
dBm
27.0
I_C = 75 mA
NF
Noise Figure: V_CE = 5V, I_C =20 mA
f = 1.0 GHz
dB
1.6
h_FE
Forward Current Transfer Ratio: V_CE = 5V, I_C = 15 mA
30
100
300
I_CBO
Collector Cutoff Current : V_CB = 8V
µA
0.4
C_CB
Collector Base Capacitance: V_CB =8V
f = 1MHz
pF
.75