BPT1819E03 Datasheet, PDF (1/1 Pages) List of Unclassifed Manufacturers – High Performance Silicon Bipolar Transistor Intended

BIPOLARICS, INC. Part Number BPT1819E03
NPN SILICON MICROWAVE POWER TRANSISTORS
PRODUCT DATA SHEET
FEATURES:
• High Output Power
3 W @ 1.8 GHz
• High Gain Bandwidth Product
ft = 6.0 GHz typ @ I_C = 480 mA
• High Gain
DESCRIPTION AND APPLICATIONS:
Bipolarics' BPT1819E03 is a high performance silicon bipolar transistor
intended for linear power applications at frequencies of 1.8 to 1.9 GHz.
Typical applications include amplifiers in aeronautical, maritime and
personal communication applications. The BPT1819E03 is bonded
common emitter for linear applications. Linear output power of 3
Watts can be achieved. BeO flange packaging makes this device
excellent for industrial and military products. Uniformity and reliability
are assured by the use of ion implanted junctions, ion implanted ballast
resistors and gold metallization.
G_PE ⁼ 10.0 dB @ 1.8 GHz
• Gold Metallization System
Absolute Maximum Ratings:
• High thermal efficiency BeO 6 Lead
Flange package (package 36)
PERFORMANCE DATA:
• Electrical Characteristics (T_A = 25^oC)
SYMBOL
V_CES
V_CEO
V_EBO
I_C
T_J
T_STG
PARAMETERS
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Junction Temperature
Storage Temperature
θJC
Thermal Resistance
RATING
40
20
3.0
960
200
-65 to 200
UNITS
V
V
V
mA
o_C
o_C
11
C/W
SYMBOL
PARAMETERS & CONDITIONS
V_CE = 15V, I_C = 480 mA, Class A,Common Emitter unless stated
UNIT
MIN.
TYP.
MAX.
BVCEO
Collector-Emitter Breakdown Voltage
IC = 0.1 mA
V
20
P_1dB
G_PE
η
h_FE
C_CB
P_T
Output Power at 1dB compression
Class A P_OUT = 4 W
Efficiency:
Forward Current Transfer Ratio:
V_CE = 8.0V, I_C = 400 mA
Collector Base Capacitance:
Total Power Dissipation
f = 1.8 GHz
W
f = 1.8 GHz
dB
Class A
%
Class C
f = 1.0 MHz
f = 1.0 MHz
pF
I_E = 0
W
3.0
10.0
30
65
20
60
100
8.0
12