BMT1720B20 Datasheet, PDF (1/5 Pages) List of Unclassifed Manufacturers – SILICON MICROWAVE POWER TRANSISTOR

BIPOLARICS, INC Part Number BMT1720B20
SILICON MICROWAVE POWER TRANSISTOR
PRODUCT DATA SHEET
FEATURES:
• Common Base, Class C Package Configuration
• High Output Power
20 W @ 1.7 to 2.0 GHz
• High Gain Bandwidth Product
• Higfth=G6a.i0nGHz ^{@ IC = 3200 mA}
GPE = 7.0 dB to 8.2 dB
• High Reliability
Gold Metallization
Nitride Passivation
• Diffused Ballast Resistors
• BeO Package
• Built-In Matching Network
for Broadband Operation
PERFORMANCE DATA:
• Electrical Characteristics (T_A = 25^oC)
Absolute Maximum Ratings:
SYMBOL
PARAMETERS
RATING UNITS
V_CBO Collector-Base Voltage
50
V
V_CEO Collector-Emitter Voltage
28
V
V_EBO Emitter-Base Voltage
3.5
V
I_C
Collector Current (instantaneous) 3200
mA
T_J
Junction Temperature
200
o_C
T_STG
Storage Temperature
-65 to 200 ^oC
θJC
Thermal Resistance
6.5
C/W
SYMBOL
P_1dB
η
PARAMETERS & CONDITIONS
V_CE =28V, I_C = 3200 mA, Class C
Power output at 1 dB compression:
f = 1.7 GHz
UNIT
W
Collector Efficiency
Class C
%
MIN.
TYP. MAX.
20
50
h_FE
Forward Current Transfer Ratio: V_CB = 5V, I_C = 100 mA
10
60
100
C_OB
Output Capacitance:
f = 1 MHz, I _E = 0
pF
4.5
P_T
Total Power Dissipation
W
40