BFR96 Datasheet, PDF (1/1 Pages) Microsemi Corporation – RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

BFR96
N-P-N bipolar silicon RF transistor
in plastic package SOT-37
5.5max
1.5max
5.2max
9.0max
1.0max
1
2
3
Pinouts:
1- Base, 2- Collector, 3-Emitter
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_tot
Ratings
Parameter, unit
Collector- base voltage, V
Collector- emitter voltage, V
Emitter- base voltage, V
Collector current, mA
Power dissipation, mW
Symbol
Characteristics (T _A = 25°C)
Parameter, unit, test conditions
f_T
Transition frequency, GHz,
I_E=50mA, V_CB=10V
h_FE
DC current gain,
I_E=50mA, V_CB=10V
I_CBO
Collector cut-off current, nA,
I_E= 0mA, V_CB=10V
G_PS
Power gain, dB,
I_E=50mA, V_CE=10V, f=500MHz
F
Noise figure, dB
I_E=50mA, V_CE=10V, f=500MHz
C_C
Collector capacitance, pF,
V_CB=10V, f= 1MHz
Limits
20
15
3
75
700
Limits
min
max
3.2
50
100
13.0
4.0
2.0
Planeta
Electronic company
JSC Planeta, 2/13, Fedorovsky Ruchei, Veliky Novgorod, 173004, Russia
Ph/Fax: [phone], 3-32-86 E-mail: [e-mail]
http://www.planetasemi.com