BF115 Datasheet, PDF (1/3 Pages) List of Unclassifed Manufacturers – NPN SILICON PLANAR RF TRANSISTOR

Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
NPN SILICON PLANAR RF TRANSISTOR
IS/ISO 9002
Lic# QSC/L- 000019.2
BF115
TO-72
Metal Can Package
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise)
DESCRIPTION
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Base Current Continuous
Total Power Dissipation @ Ta=45ºC
Operating & Storage Junction
Temperature Range
SYMBOL
V_CBO
V_CEO
V_EBO
I_C
I_B
P_D
T_j, T_stg
VALUE
50
30
5
30
1
145
-55 to +175
THERMAL RESISTANCE
Junction to Ambient
R_th(j-a)
900
UNIT
V
V
V
mA
mA
mW
°C
°C/W
ELECTRICAL CHARACTERISTICS (Ta=25º C unless specified otherwise )
DESCRIPTION
SYMBOL
TEST CONDITION
VALUE
MIN TYP MAX
Collector Emitter Breakdown Voltage BV_CEO* I_C=2mA, I_B=0
30
Collector Base Breakdown Voltage
BV_CBO I_C=10µA, I_E=0
50
Emitter Base Breakdown Voltage
BV_EBO I_E=10µA, I_C=0
5
Collector Cut off Current
I_CBO V_CB=20V, I_E=0, Ta=175ºC
DC Current Gain
h_FE I_C=1mA,V_CE=10V
48
I_C=20mA*,V_CE= 2V
40
Base Emitter On Voltage
V_BE(on) I_C=1mA,V_CE=10V
600
I_C=20mA,V_CE= 2V*
DYNAMIC CHARACTERISTICS
Transition Frequency
f_T I_C=1.0mA, V_CE=10V, f=100MHz
0.5
167
700 740
1000
230
Feedback Capacitance
Noise Figure
C_re V_CB=10V,I_C=1mA,f=0.45MHz
NF V_CE=10V, I_C=1mA, Rg=300KΩ,
f=200KHz
f=1MHz
0.65 0.8
1.5
1.2
Pulse Test: pulse Width <300µS, Duty Cycle<2%
UNIT
V
V
V
µA
mV
mV
MHz
pF
dB
dB
Continental Device India Limited
Data Sheet
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