BC846 Datasheet, PDF (1/3 Pages) NXP Semiconductors – NPN general purpose transistors

SOT23 NPN SILICON PLANAR
GENERAL PURPOSE TRANSISTORS
ISSUE 6 - JANUARY 1997
BC846
BC848
BC850
BC847
BC849
PARTMARKING DETAILS
BC846A–Z1A BC848B–1K
BC846B–1B BC848C–Z1L
BC847A–Z1E BC849B–2B
BC847B–1F BC849C–2C
BC847C–1GZ BC850B–2FZ
BC848A–1JZ BC850C-Z2G
COMPLEMENTARY TYPES
BC846
BC856
BC847
BC857
BC848
BC858
BC849
BC859
BC850
BC860
E
C
B
SOT23
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Peak Base Current
Peak Emitter Current
Power Dissipation at T_amb=25°C
Operating and Storage
Temperature Range
SYMBOL
V_CBO
V_CES
V_CEO
V_EBO
I_C
I_CM
I_BM
I_EM
P_tot
T_j:T_stg
BC846
80
80
65
BC847
50
50
45
6
BC848 BC849
30
30
30
30
30
30
5
100
200
200
200
330
-55 to +150
BC850
50
50
45
UNIT
V
V
V
V
mA
mA
mA
mA
mW
°C
ELECTRICAL CHARACTERISTICS (at T_amb = 25°C unless otherwise stated).
PARAMETER
SYMBOL
BC846 BC847 BC848 BC849 BC850 UNIT CONDITIONS.
Collector Cut-Off Current I_CBO
Max
Max
Collector-Emitter
Saturation Voltage
V_CE(sat) Typ
Max.
Typ
Max.
15
nA V_CB = 30V
5
µA V_CB = 30V
T_amb=150°C
90
mV I_C=10mA,
250
mV I_B=0.5mA
200
mV I_C=100mA,
600
mV I_B=5mA
Typ
Max.
300
mV I_C=10mA*
600
mV
Base-Emitter
Saturation Voltage
Base-Emitter Voltage
V_{BE(sat) Typ}
Typ
V_{BE Min}
Typ
Max
700
mV I_C=10mA,
I_B=0.5mA
900
mV I_C=100mA,
I_B=5mA
580
mV I_C=2mA
660
mV V_CE=5V
700
mV
Max
770
mV I_C=10mA
V_CE=5V
* Collector-Emitter Saturation Voltage at I_C = 10mA for the characteristics going through the
operating point I_C = 11mA, V_CE = 1V at constant base current.