B12V105 Datasheet, PDF (1/8 Pages) List of Unclassifed Manufacturers – NPN LOW NOISE SILICON MICROWAVE TRANSISTOR

BIPOLARICS, INC.
Part Number B12V105
NPN LOW NOISE SILICON MICROWAVE TRANSISTOR
PRODUCT DATA SHEET
FEATURES:
• High Gain Bandwidth Product
ft = 10 GHz typ @ I_C = 10 mA
• Low Noise Figure
1.6 dB typ at 1 GHz
2.0 dB typ at 2 GHz
• High Gain
|S₂₁|² = 18.1 dB @ 1 GHz
12.8 dB @ 2 GHz
• Dice, Plastic, Hermetic and Surface
Mount packages available
PERFORMANCE DATA:
• Electrical Characteristics (T_A = 25^oC)
DESCRIPTION AND APPLICATIONS:
Bipolarics' B12V105 is a high performance silicon bipolar
transistor intended for use in low noise application at VHF,
UHF and microwave frequencies. High performance low
noise performance can be realized at 2 mA or less making the
B12V105 an excellent choice for battery applications. From
10 mA to greater than 25 mA, f is nominally 10 GHz.
t
Maximum recommended continuous current is 40 mA. A
broad range of packages are offered including SOT-23, SOT-
143, plastic and ceramic 0.085" Micro-X, 0.070" Stripline and
unencapsulated dice.
Absolute Maximum Ratings:
SYMBOL
PARAMETERS
RATING
V_CBO
V_CEO
V_EBO
I_{C CONT}
T_J
T_STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Junction Temperature
Storage Temperature
20
12
1.5
40
200
-65 to 150
UNITS
V
V
V
mA
o_C
o_C
SYMBOL
f_t
|S ₂₁ | ²
P_{1d B}
G_{1d B}
NF
h_FE
I_CBO
I_EBO
C_CB
PARAMETERS & CONDITIONS
V_CE =8V, I_C = 10 mA unless stated
Gain Bandwidth Product
Insertion Power Gain:
f = 1.0 GHz, I_C = 10 mA
I_C = 25 mA
f = 2.0 GHz, I_C = 10 mA
I_C = 25 mA
Power output at 1dB compression:
f = 1.0 GHz
Gain at 1dB compression:
f = 1.0 GHz
Noise Figure: V_CE =8V, I_C = 2mA
Forward Current Transfer Ratio:
V_CE = 8V, I_C = 10 mA
f = 1.0 GHz
Z_S = 50Ω
f = 1MHz
Collector Cutoff Current : V_CB =8V
Emitter Cutoff Current : V_EB =1V
Collector Base Capacitance: V_CB = 8V
f = 1MHz
UNIT
GHz
dBm
dBm
dB
µA
µA
pF
MIN.
TYP. MAX.
10
17.5
18.1
12.8
12.6
12
15
1.6
50
100
250
0.2
1.0
0.11