ATF1040 Datasheet, PDF (1/3 Pages) List of Unclassifed Manufacturers – FAST SWITCHING THYRISTOR

ANSALDO
Ansaldo Trasporti s.p.a.
Unita' Semiconduttori
Via N. Lorenzi 8 - I 16152 GENOVA - ITALY
Tel. int. +39/(0)10 6556549 - (0)10 6556488
Fax Int. +39/(0)10 6442510
Tx 270318 ANSUSE I -
ATF1040 FAST SWITCHING THYRISTOR
FINAL SPECIFICATION
mag 97 - ISSUE : 06
Repetitive voltage up to
Mean on-state current
Surge current
Turn-off time
2000 V
1075 A
14 kA
50 µs
Symbol Characteristic
BLOCKING
Conditions
Tj
[°C]
Value
Unit
V RRM
Repetitive peak reverse voltage
125 2000
V
V RSM
Non-repetitive peak reverse voltage
125 2100
V
V DRM
Repetitive peak off-state voltage
125 2000
V
I RRM
Repetitive peak reverse current
V=VRRM
125 150
mA
I DRM
Repetitive peak off-state current
CONDUCTING
V=VDRM
125 150
mA
I T (AV)
Mean on-state current
180° sin, 50 Hz,Th=55°C, double side cooled
1075
A
I T (AV)
Mean on-state current
180° sin, 1 kHz,Th=55°C, double side cooled
1000
A
I TSM
Surge on-state current, non repetitive
sine wave, 10 ms
125 14
kA
I² t
I² t
without reverse voltage
980 x1E3 A²s
VT
On-state voltage
On-state current = 2000 A
25 2.6
V
V T(TO)
Threshold voltage
125 1.40
V
rT
On-state slope resistance
SWITCHING
125 0.414
mohm
di/dt
Critical rate of rise of on-state current, min From 75% VDRM up to 1200 A, gate 10V 5 ohm 125 500
A/µs
dv/dt
Critical rate of rise of off-state voltage, min Linear ramp up to 70% of VDRM
125 500
V/µs
td
Gate controlled delay time, typical
VD=100V, gate source 20V, 10 ohm , tr=1 µs
25 0.6
µs
tq
Circuit commutated turn-off time
di/dt = 20 A/µs, I= I1=0008A00 A
125 50
µs
dV/dt = 200 V/µs , up to 75% VDRM
Q rr
Reverse recovery charge
di/dt = 60 A/µs, I= I1=0001A000 A
125 620
µC
I rr
Peak reverse recovery current
VR = 50 V
227
A
IH
Holding current, typical
VD=5V, gate open circuit
25 500
mA
IL
Latching current, typical
GATE
VD=5V, tp=30µs
25 850
mA
V GT
Gate trigger voltage
VD=5V
25 3.5
V
I GT
Gate trigger current
VD=5V
25 350
mA
V GD
Non-trigger gate voltage, min.
VD=VDRM
125 0.25
V
V FGM
Peak gate voltage (forward)
25
30
V
I FGM
Peak gate current
25
10
A
V RGM
Peak gate voltage (reverse)
25
5
V
P GM
Peak gate power dissipation
Pulse width 100 µs
25 150
W
P G(AV)
Average gate power dissipation
25
3
W
MOUNTING
R th(j-h)
Thermal impedance, DC
Junction to heatsink, double side cooled
26
°C/kW
Tj
Operating junction temperature
-30 / 125 °C
F
Mounting force
14.0 / 17.0 kN
Mass
ORDERING INFORMATION : ATF1040 S 20 S
standard specification
tq code
VDRM&VRRM/100
500
g
tq code _{D 10 µs C 12 µs B 15 µs A 20 µs L 25 µs}
M 30 µs N 35 µs P 40 µs R 45 µs S 50 µs
T 60 µs U 70 µs W 80 µs X 100µs Y 150µs