AS6VA5128 Datasheet, PDF (1/9 Pages) List of Unclassifed Manufacturers – 2.7V to 3.3V 512K X 8 Intelliwatt low-power CMOS SRAM

October 2000
®
2.7V to 3.3V 512K × 8 Intelliwatt™ low-power CMOS SRAM
AS6VA5128
Features
• AS6VA5128
• Intelliwatt™ active power circuitry
• Industrial and commercial temperature ranges available
• Organization: 524,288 words × 8 bits
• 2.7V to 3.3V at 55 ns
• Low power consumption: ACTIVE
- 132 mW at 3.3V and 55 ns
• Low power consumption: STANDBY
- 66 µW max at 3.3V
• 1.2V data retention
• Equal access and cycle times
• Easy memory expansion with CS, OE inputs
• Smallest footprint packages
- 36(48)-ball FBGA
- 32-pin TSOP I and TSOP II packages are available on
Alliance AS6UB5128 product family (available January
2001)
• ESD protection ≥ 2000 volts
• Latch-up current ≥ 200 mA
Logic block diagram
V_CC
GND
Input buffer
A0
A1
A2
A3
512K × 8
A4
Array
A5
A6
(4,194,304)
A7
A8
Column decoder
Control
circuit
I/O8
I/O1
WE
OE
CS
48-CSP BGA Package (shading indicates no ball)
1
2
3
4
5
6
A
A₀
A₁
NC
A₃
A₆
A₈
B
I/O₅
A₂
WE
A₄
A₇
I/O₁
C
I/O₆
NC
A₅
I/O₂
D
V_SS
V_CC
E
V_CC
V_SS
F
I/O₇
A₁₈
A₁₇
I/O₃
G
I/O₈ OE
CS
A₁₆ A₁₅ I/O₄
H
A₉
A₁₀
A₁₁
A₁₂
A₁₃
A₁₄
Selection guide
V_CC Range
Min
Typ²
Max
Product
(V)
(V)
(V)
AS6VA5128
2.7
3.0
3.3
Speed
(ns)
55
Power Dissipation
Operating (I_CC)
Max (mA)
Standby (I_SB1)
Max (µA)
2
20
10/6/00
ALLIANCE SEMICONDUCTOR
1
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