AS4C1M16F5 Datasheet, PDF (1/21 Pages) List of Unclassifed Manufacturers – 5V 1M X 16 CMOS DRAM

AS4C1M16F5
®
5V 1M×16 CMOS DRAM (fast-page mode)
Features
• Organization: 1,048,576 words × 16 bits
• High speed
- 50/60 ns RAS access time
- 20/25 ns fast page cycle time
- 13/17 ns CAS access time
• Low power consumption
- Active: 880 mW max (AS4C1M16E0-60)
- Standby: 11 mW max, CMOS DQ
• Fast page mode
• 1024 refresh cycles, 16 ms refresh interval
- RAS-only or CAS-before-RAS refresh
• Read-modify-write
• TTL-compatible, three-state DQ
• JEDEC standard package and pinout
- 400 mil, 42-pin SOJ
- 400 mil, 44/50-pin TSOP II
• 5V power supply
• Industrial and commercial temperature available
Pin arrangement
SOJ
Vcc
1
42
DQ1
2
41
DQ2
3
40
DQ3
4
39
DQ4
5
38
Vcc
6
37
DQ5
7
36
DQ6
8
35
DQ7
9
34
DQ8
10
33
NC
11
32
NC
12
31
WE
13
30
RAS
14
29
NC
15
28
NC
16
27
A0
17
26
A1
18
25
A2
19
24
A3
20
23
Vcc
21
22
V_SS
DQ16
DQ15
DQ14
DQ13
V_SS
DQ12
DQ11
DQ10
DQ9
NC
LCAS
UCAS
OE
A9
A8
A7
A6
A5
A4
V_SS
TSOP II
V_{CC 1}
DQ1 2
DQ2 3
DQ₃ 4
DQ4 5
V_{CC 6}
DQ5 ₇
DQ6 8
DQ7 9
DQ8 ₁₀
NC 11
50 V_SS
49 DQ16
48 DQ15
47 DQ14
46 DQ13
45 VSS
44 DQ12
43 DQ11
42 DQ10
41 DQ9
40 NC
NC 15
NC 16
WE 17
RAS 18
NC 19
NC 20
A0 21
A1 22
A2 23
A3 24
V_CC 25
36 NC
35 LCAS
34 UCAS
33 OE
32 A9
31 A8
30 A7
29 A6
28 A5
27 A4
26 V_SS
Selection guide
Maximum RAS access time
Maximum column address access time
Maximum CAS access time
Maximum output enable (OE) access time
Minimum read or write cycle time
Minimum fast page mode cycle time
Maximum operating current
Maximum CMOS standby current
Symbol
t_RAC
t_AA
t_CAC
t_OEA
t_RC
t_PC
I_CC1
I_CC5
Pin designation
Pin(s)
Description
A0 to A9
Address inputs
RAS
Row address strobe
DQ1 to DQ16 Input/output
OE
Output enable
WE
Write enable
UCAS
Column address strobe, upper byte
LCAS
Column address strobe, lower byte
V_CC
Power
V_SS
Ground
AS4C1M16F5-50 AS4C1M16F5-60
Unit
50
60
ns
25
30
ns
13
17
ns
13
15
ns
84
104
ns
20
25
ns
170
160
mA
2.0
2.0
mA
4/11/01; v.0.9.1
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