|
AP9926EO Datasheet, PDF (1/6 Pages) List of Unclassifed Manufacturers – Power MOSFETs from APEC provide the designer with the best combination of fast switching | |||
|
Advanced Power
Electronics Corp.
AP9926EO
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
â¼ Low on-resistance
â¼ Capable of 2.5V gate drive
â¼ Low drive current
â¼ Surface mount package
G2
S2
S2
D2
TSSOP-8
G1
S1
S1
D1
Description
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
BVDSS
RDS(ON)
ID
20V
28mΩ
4.6A
D1
D2
G1
G2
S1
S2
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TA=25â
ID@TA=70â
IDM
PD@TA=25â
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Rthj-amb
Parameter
Thermal Resistance Junction-ambient3
Rating
20
± 12
4.6
3.7
20
1
0.008
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/â
â
â
Max.
Value
125
Unit
â/W
Data and specifications subject to change without notice
20112502
|
▷ |