AOD442 Datasheet, PDF (1/5 Pages) List of Unclassifed Manufacturers – N-Channel Enhancement Mode Field Effect Transistor

Rev 2: Dec 2004
AOD442, AOD442L ( Green Product )
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AOD442 uses advanced trench technology to
provide excellent R_DS(ON) and low gate charge. This
device is suitable for use as a load switch or in PWM
applications. AOD442L ( Green Product ) is offered in
a lead-free package.
Features
V_DS (V) = 60V
I_D = 38A
R_DS(ON) < 20mΩ (V_GS = 10V)
R_DS(ON) < 25mΩ (V_GS = 4.5V)
TO-252
D-PAK
Top View
Drain Connected to
Tab
GD S
D
G
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain
T_C=25°C ^G
Current ^B,G
T_C=100°C ^B
I_D
Pulsed Drain Current
I_DM
Avalanche Current ^C
I_AR
Repetitive avalanche energy L=0.1mH ^C
E_AR
T_C=25°C
Power Dissipation ^B T_C=100°C
Junction and Storage Temperature Range
P_D
T_J, T_STG
Maximum
60
±20
38
27
60
30
140
60
30
-55 to 175
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Lead ^C
t ≤ 10s
Steady-State
Steady-State
Symbol
R_θJA
R_θJL
Typ
17.4
51
1.8
Max
25
60
2.5
Alpha & Omega Semiconductor, Ltd.
Units
V
V
A
A
mJ
W
°C
Units
°C/W
°C/W
°C/W