AO8701 Datasheet, PDF (1/5 Pages) List of Unclassifed Manufacturers – P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode

Rev 1: Oct 2004
AO8701, AO8701L ( Green Product )
P-Channel Enhancement Mode Field Effect Transistor
with Schottky Diode
General Description
The AO8701 uses advanced trench technology to
provide excellent R_DS(ON) and low gate charge. A
Schottky diode is provided to facilitate the
implementation of a bidirectional blocking switch.
AO8701L ( Green Product ) is offered in a lead-free
package.
Features
V_DS (V) = -30V
I_D = -4.2A
R_DS(ON) < 50mΩ (V_GS = 10V)
R_DS(ON) < 65mΩ (V_GS = 4.5V)
R_DS(ON) < 120mΩ (V_GS = 2.5V)
SCHOTTKY
V_DS (V) = 30V, I_F = 3A, V_F=0.5V@1A
D1
S2
S3
G4
8K
7A
6A
5A
G
TSSOP-8
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain Current^A
Pulsed Drain Current^B
T_A=25°C
T_A=70°C
I_D
I_DM
Schottky reverse voltage
V_KA
Continuous Forward Current^A
Pulsed Forward Current^B
T_A=25°C
T_A=70°C
I_F
I_FM
Power Dissipation
T_A=25°C
T_A=70°C
P_D
Junction and Storage Temperature Range
T_J, T_STG
Parameter: Thermal Characteristics MOSFET
Maximum Junction-to-Ambient^A
t ≤ 10s
Maximum Junction-to-Ambient^A
Steady-State
Maximum Junction-to-Lead^C
Steady-State
Thermal Characteristics Schottky
Maximum Junction-to-Ambient^A
t ≤ 10s
Maximum Junction-to-Ambient^A
Steady-State
Maximum Junction-to-Lead^C
Steady-State
Symbol
R_θJA
R_θJL
R_θJA
R_θJL
D
K
S
A
MOSFET
-30
±12
-4.2
-3.5
-30
1.4
1
-55 to 150
Typ
73
96
63
75
97
63
Schottky
30
3
2
40
1.4
1
-55 to 150
Max
90
125
75
90
125
75
Units
V
V
A
V
A
W
°C
Units
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.