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AO6402 Datasheet, PDF (1/4 Pages) List of Unclassifed Manufacturers – N-Channel Enhancement Mode Field Effect Transistor
Rev 3:Nov 2004
AO6402, AO6402L ( Green Product )
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO6402 uses advanced trench technology to
provide excellent RDS(ON) and low gate charge. This
device may be used as a load switch or in PWM
applications. AO6402L ( Green Product ) is offered in
a lead-free package.
Features
VDS (V) = 30V
ID = 6.9A
RDS(ON) < 28mΩ (VGS = 10V)
RDS(ON) < 42mΩ (VGS = 4.5V)
TSOP-6
Top View
D 16 D
D 25 D
G 34 S
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TA=25°C
Current A
TA=70°C
ID
Pulsed Drain Current B
IDM
Power Dissipation
TA=25°C
TA=70°C
PD
Junction and Storage Temperature Range TJ, TSTG
Maximum
30
±20
6.9
5.8
20
2
1.44
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
Symbol
Typ
t ≤ 10s
Steady-State
RθJA
48
74
Steady-State
RθJL
35
Max
62.5
110
40
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.