AO6400 Datasheet, PDF (1/6 Pages) List of Unclassifed Manufacturers – N-Channel Enhancement Mode Field Effect Transistor

July 2001
AO6400
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO6400 uses advanced trench technology to
provide excellent R_DS(ON), low gate charge and
operation with gate voltages as low as 2.5V. This
device is suitable for use as a load switch or in
PWM applications.
Features
V_DS (V) = 30V
I_D = 6.9 A
R_DS(ON) < 28mΩ (V_GS = 10V)
R_DS(ON) < 33mΩ (V_GS = 4.5V)
R_DS(ON) < 52mΩ (V_GS = 2.5V)
TSOP-6
Top View
D 16 D
D 25 D
G 34 S
D
G
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Maximum
Drain-Source Voltage
V_DS
30
Gate-Source Voltage
V_GS
±12
Continuous Drain T_A=25°C
6.9
Current ^A
T_A=70°C
I_D
5.8
Pulsed Drain Current ^B
I_DM
35
T_A=25°C
Power Dissipation ^A T_A=70°C
P_D
2
1.44
Junction and Storage Temperature Range T_J, T_STG
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Max
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
t ≤ 10s
Steady-State
R_θJA
47.5
74
62.5
110
Maximum Junction-to-Lead ^C
Steady-State
R_θJL
37
50
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.