AO4402 Datasheet, PDF (1/6 Pages) List of Unclassifed Manufacturers – N-Channel Enhancement Mode Field Effect Transistor

March 2002
AO4402
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO4402 uses advanced trench technology to
provide excellent R_DS(ON), low gate charge and
operation with gate voltages as low as 2.5V. This
device is suitable for use as a load switch or in PWM
applications.
Features
V_DS (V) = 30V
I_D = 12A
R_DS(ON) < 14mΩ (V_GS = 10V)
R_DS(ON) < 16mΩ (V_GS = 4.5V)
R_DS(ON) < 22mΩ (V_GS = 2.5V)
S
D
S
D
S
D
G
D
SOIC-8
D
G
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain T_A=25°C
Current ^A
T_A=70°C
I_D
Pulsed Drain Current ^B
I_DM
Power Dissipation
T_A=25°C
T_A=70°C
P_D
Junction and Storage Temperature Range T_J, T_STG
Maximum
30
±12
12
10
80
3
2.1
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
t ≤ 10s
Steady-State
R_θJA
23
48
Maximum Junction-to-Lead ^C
Steady-State
R_θJL
12
Max
40
65
16
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.