A1020 Datasheet, PDF (1/1 Pages) List of Unclassifed Manufacturers – Silicon PNP Epitaxial Transistor

A1020
A1020 Silicon PNP Epitaxial Transistor
Description: The A1020 is designed for use in power amplifier applications and power
switching applications
Features: ●Low collector saturation voltage
●Complementary to C2328
Chip Appearance
Chip Size
Chip Thickness
Bonding Pad Size
Front Metal
Backside Metal
Scribe line width
Wafer Size
Base
Emitter
760um×760um
210±20um
160×170um
130×260um
Al
Au
60um
6 inch
Electrical Characteristics( Ta=25℃)
Characteristic
Symbol
Test Condition
Collector Cutoff Current
Emitter Cutoff Current
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
DC Current Gain
I_CBO
I_EBO
BV_CBO
BV_CEO
BV_EBO
h_FE
V_CB=-35V, I_E=0
V_EB=-5V, I_C=0
I_C=-0.1mA
I_C=-10mA
I_E=-0.1mA
V_CE=-2V, I_C=-0.5A
Collector Saturation Voltage
V_CE(sat) IC=-1A, IB=-50mA
Min Max Unit
-0.1 uA
-0.1 uA
-40
V
-30
V
-5.0
V
80 400
-0.5
V
May.2004
Version :0.0
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