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9014B Datasheet, PDF (1/1 Pages) List of Unclassifed Manufacturers – Silicon NPN Epitaxial Transistor
9014B
9014B Silicon NPN Epitaxial Transistor
Description :The 9014B is designed for use in pre-amplifier of low level and low noise
Features: ●Excellent hFE Linearity
●Complementary to 9015B
Chip Appearance
Chip Size
Chip Thickness
Bonding Pad Size
Base
Emitter
350um×350um
210±20um
110um×110um
100um×100um
Front Metal
Backside Metal
Al
Au(As)
Scribe line width
40um
Wafer Size
6 inch
Electrical Characteristics( Ta=25℃)
Characteristic
Symbol
Test Condition
Min Max Unit
Collector Cutoff Current
Emitter Cutoff Current
Collector-Base Breakdown Voltage
ICBO VCB=40V, IE=0
IEBO VEB=5V, IC=0
BVCBO IC=0.1mA,
Collector-Emitter Breakdown Voltage BVCEO IC=1mA,
Emitter-Base Breakdown Voltage
BVEBO IE=0.1mA,
0.1
uA
0.1
uA
50
V
45
V
5.0
V
DC Current Gain
hFE VCE=5V, IC=1mA
150 600
Collector Saturation Voltage
VCE(sat) IC=100mA,IB=5mA
0.30
V
May.2004
Version :0.0
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