9012LT1 Datasheet, PDF (1/1 Pages) List of Unclassifed Manufacturers – SOT-23 Plastic-Encapsulate Transistors

SHENZHEN ICHN ELECTRONICS TECH. CO., LTD
SOT-23 Plastic-Encapsulate Transistors
9012LT1 TRANSISTOR PNP
FEATURES
SOT 23
1. BASE
2. EMITTER
3. COLLECTOR
Power dissipation
P_CM : 0.3
W Tamb=25
Collector current
I_CM : -0.5
A
Collector-base voltage
V_(BR)CBO : -40
V
Operating and storage junction temperature range
T_J T_stg: -55 to +150
ELECTRICAL CHARACTERISTICS Tamb=25
unless
otherwise specified
Parameter
Symbol
Test conditions
MIN
Collector-base breakdown voltage
V(BR)CBO
Ic= -100 A IE=0
-40
Collector-emitter breakdown voltage
V(BR)CEO
Ic= -1m A IB=0
-25
Emitter-base breakdown voltage
V(BR)EBO
IE=-100 A IC=0
-5
Collector cut-off current
ICBO
VCB=-40 V , IE=0
Collector cut-off current
ICEO
VCE=-20V , IB=0
Emitter cut-off current
IEBO
VEB= -5V , IC=0
DC current gain
hFE(1)
VCE=-1V, IC= -50m A
120
hFE(2)
VCE=-1V, IC=-500mA
40
Collector-emitter saturation voltage
VCE(sat) IC=-500 mA, IB= -50m A
Base-emitter saturation voltage
Transition frequency
CLASSIFICATION OF h_FE(1)
VBE(sat) IC=-500 mA, IB= -50m A
fT
VCE=-6V, IC= -20mA
150
f=30MHz
Unit : mm
TYP MAX UNIT
V
V
V
-0.1
A
-0.1
A
-0.1
A
350
-0.6
V
-1.2
V
MHz
DEVICE MARKING: 9012LT1=2T1
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