8550SS Datasheet, PDF (1/3 Pages) List of Unclassifed Manufacturers – TO-92 Plastic-Encapsulate Transistors

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
8550SS TRANSISTOR PNP
FEATURES
Power dissipation
P_CM : 1W
Tamb=25
Collector current
I_CM: -1.5 A
Collector-base voltage
V_(BR)CBO : - 40V
Operating and storage junction temperature range
T_J T_stg: -55 to +150
ELECTRICAL CHARACTERISTICS Tamb=25 unless
TO 92
1.EMITTER
2. COLLECTOR
3. BASE
123
otherwise specified
Parameter
Symbol
Test conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V(BR)CBO Ic= -100 A IE=0
-40
V
Collector-emitter breakdown voltage V(BR)CEO
IC= -0.1 mA , IB=0
-25
V
Emitter-base breakdown voltage
V(BR)EBO
IE= -100 A IC=0
-6
V
Collector cut-off current
ICBO
VCB= -40 V , IE=0
-0.1
A
Collector cut-off current
ICEO
VCE= -20 V , IE=0
-0.1
A
Emitter cut-off current
IEBO
VEB= -5 V , IC=0
-0.1
A
DC current gain
hFE 1
VCE= -1V , IC=-100 mA
85
300
hFE 2
VCE=-1V , IC=-800 mA
40
Collector-emitter saturation voltage
VCE(sat)
IC=-800 m,IB=-80 mA
-0.5
V
Base-emitter saturation voltage
VBE(sat)
IC=-800mA,IB=-80 mA
-1.2
V
Transition frequency
VCE=-10 V, IC=-50mA
fT
100
f =30 MHz
MHz
CLASSIFICATION OF h_FE(1)
Rank
Range
B
85-160
C
120-200
D
160-300