672-1175M Datasheet, PDF (1/3 Pages) List of Unclassifed Manufacturers – RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS

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672-1175M
RF & MICROWAVE TRANSISTORS
AVIONICS APPLICATIONS
Features
· 1025 – 1150 MHz
· 50 VOLTS
· INTERNAL INPUT/OUTPUT MATCHING
· P_OUT = 175 WATTS
· G_P = 7.7 dB MINIMUM
· COMMON BASE CONFIGURATION
DESCRIPTION:
The 672-1175M is a NPN bipolar transistor specifically designed
for high peak pulse power applications such as DME/TACAN.
This device is capable of withstanding a minimum 20:1 load
VSWR at any phase angle under full rated conditions. Internal
impedance matching provides consistent broadband
performance.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
P_DISS
I_C
V_CC
TJ
Parameter
Power Dissipation
Device Current
Collector-Supply Voltage*
Junction Temperature
T_STG
Storage Temperature
Thermal Data
R_TH(J-C)
Thermal Resistance Junction-case
Value
400
12
55
200
-65 to +200
0.3
Unit
W
A
V
°C
°C
°C/W