60N035 Datasheet, PDF (1/2 Pages) List of Unclassifed Manufacturers – N-Channel Field Effect Transistor

Bay Linear
Linear Excellence
N-Channel Field Effect Transistor
60N035
Advance Information
Description
The Bay Linear n-channel power field effect transistors are
produced using high cell density DMOS technology , These
devices are particularly suited for low voltage applications
such as automotive and other battery powered circuits where
fast switching, low in-line power loss and resistance to
transistors are needed.
The TO-220 is offered in a 3-pin is universally preferred for all
commercial-industrial applications at power dissipation level
to approximately to 50 watts. Also, available in a D² surface
mount power package with a power dissipation up to 2 Watts
Features
• Critical DC Electrical parameters
specified at elevated Temp.
• Rugged internal source-drain diode
can eliminate the need for external
Zener diode transient suppresser
• Super high density cell design for
extremely low R_DS(ON)
V_DSS = 30V
R_{DS (ON)} = 0.015 Ω
I_D = 60A
Ordering Information
Device
Package
60N035T
60N035S
TO-220
TO-263 ( D² )
Temp.
0 to 150°C
0 to 150°C
Absolute Maximum Rating
Symbol
Parameter
I_D
V_DSS
V_GSV
P_D
T_J
T_STG
Drain Current
Continues
Pulsed
Drain-Source Voltage
Gate Source Voltage
Total Power Dissipation @ T_C =25°C
Derate above 25°C
Operating and Storage
Temperature Range
Max
60
180
30
±20
50
0.4
-65 to 175
Unit
A
V
V
W
W/°C
°C
Bay Linear, Inc 2478 Armstrong Street, Livermore, CA 94550 Tel: [phone], Fax: [phone]
www.baylinear.com