5STP33L2800 Datasheet, PDF (1/6 Pages) List of Unclassifed Manufacturers – Patented free-floating silicon technology

V_DSM = 2800 V
I_TAVM = 3740 A
I_TRMS = 5880 A
I_TSM = 60000 A
V_T0
=
0.95 V
r_T
= 0.100 mΩ
Phase Control Thyristor
5STP 33L2800
Doc. No. 5SYA1011-03 Sep. 01
• Patented free-floating silicon technology
• Low on-state and switching losses
• Designed for traction, energy and industrial applications
• Optimum power handling capability
• Interdigitated amplifying gate
Blocking
Part Number
V_DRM
V_RRM
V_RSM1
I_DRM
I_RRM
dV/dt_crit
5STP 33L2800 5STP 33L2600 5STP 33L2200 Conditions
2800 V
2600 V
2200 V f = 50 Hz, t_p = 10ms
3000 V
2800 V
2400 V t_p = 5ms, single pulse
≤ 400 mA
≤ 400 mA
V_DRM
V_RRM
T_j = 125°C
1000 V/µs
Exp. to 0.67 x V_DRM, T_j = 125°C
Mechanical data
F_M Mounting force
nom.
min.
max.
a _Acceleration
Device unclamped
Device clamped
m Weight
D_S Surface creepage distance
D_a Air strike distance
70 kN
63 kN
84 kN
50 m/s²
100 m/s²
1.45 kg
36 mm
15 mm
ABB Semiconductors AG reserves the right to change specifications without notice.