3CA8772 Datasheet, PDF (1/3 Pages) List of Unclassifed Manufacturers – TO-126 Plastic-Encapsulate Transistors

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-126 Plastic-Encapsulate Transistors
3CA8772 TRANSISTOR PNP
FEATURES
Power dissipation
P_CM : 1.25 W Tamb=25
Collector current
I_CM : -3
A
Collector-base voltage
V_(BR)CBO : -40 V
Operating and storage junction temperature range
T_J T_stg: -55 to +150
TO 126
1. EMITTER
2.COLLECTOR
3.BASE
123
ELECTRICAL CHARACTERISTICS Tamb=25
Parameter
Symbol
unless otherwise specified
Test conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V(BR)CBO
Ic=-100 A IE=0
-40
V
Collector-emitter breakdow n voltage V(BR)CEO IC= -10 mA , IB=0
-30
V
Emitter-base breakdown voltage
V(BR)EBO
IE= -100 A IC=0
-6
V
Collector cut-off current
ICBO
VCB= -40 V , IE=0
-10
A
Collector cut-off current
Emitter cut-off current
ICEO
VCE=-30 V , IB=0
IEBO
VEB=-6V , IC=0
-10
A
-10
A
DC current gain
hFE
VCE= -2V, IC= -1A
60
400
Collector-emitter saturation voltage
VCE(sat)
IC=-2A, IB= -0.2A
-0.5 V
Transition frequency
VCE= -5V, IC=-0.1A
fT
f = 10MHz
50
MHz
CLASSIFICATION OF hFE₍₁₎
Rank
R
Range
60-120
O
100-200
Y
160-320
GR
200-400