2SK3770-01MR Datasheet, PDF (1/4 Pages) List of Unclassifed Manufacturers – N-CHANNEL SILICON POWER MOSFET

2SK3770-01MR
N-CHANNEL SILICON POWER MOSFET
FUJI POWER MOSFET
Super FAP-G Series
Outline Drawings (mm) 200407
TO-220F
Features
High speed switching
No secondary breakdown
Avalanche-proof
Low on-resistance
Low driving power
Applications
Switching regulators
DC-DC converters
UPS (Uninterruptible Power Supply)
Maximum ratings and characteristic
Absolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Symbol
Ratings
Drain-source voltage
VDS
120
VDSX
90
Continuous Drain Current
ID
26
Pulsed Drain Current
ID(puls]
±104
Gate-Source Voltage
VGS
±30
Maximum Avalanche current
IAR
26
Non-Repetitive
EAS
342.2
Maximum Avalanche Energy
Repetitive
EAR
3.7
Maximum Avalanche Energy
Maximum Drain-Source dV/dt
dVDS/dt
20
Peak Diode Recovery dV/dt
dV/dt
5
Max. Power Dissipation
PD
37
2.16
Operating and Storage
Tch
+150
Temperature range
Isolation Voltage
Tstg
VISO
-55 to +150
2
Unit
V
V
A
A
V
A
mJ
Remarks
VGS=-30V
Note *1
Note *2
mJ Note *3
kV/µs VDS_=<120V
kV/µs Note *4
W Tc=25°C
Ta=25°C
°C
°C
kVrms ^{t=60sec. f=60Hz}
Electrical characteristics (Tc =25°C unless otherwise specified)
Equivalent circuit schematic
Drain(D)
Gate(G)
Source(S)
Note *1:Tch _=< 150°C,Repetitive and Non-repetitive
Note *2:StartingTch=25°C,IAS=11A,L=3.77mH,
VCC=48V,RG=50Ω
EAS limited by maximum channel temperature
and Avalanche current.
See to the ‘Avalanche Energy’ graph
Note *3:Repetitive rating:Pulse width limited by
maximum channel temperature.
See to the ‘Transient Thermal impedance’
graph.
Note *4:IF_=< -ID, -di/dt = 50A/µs,VCC_=<BVDSS,Tch=<150°C
Item
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Drain-Source On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time ton
Turn-Off Time toff
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Symbol
BVDSS
VGS(th)
IDSS
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
VSD
trr
Qrr
Test Conditions
ID= 250µA VGS=0V
ID= 250µA VDS=VGS
VDS=120V VGS=0V
VDS=96V VGS=0V
VGS=±30V VDS=0V
Tch=25°C
Tch=125°C
ID=13A VGS=10V
ID=13A VDS=25V
VDS=75V
VGS=0V
f=1MH
VCC=48V
ID=13A
VGS=10V
RGS=10 Ω
VCC=60V
ID=26A
VGS=10V
IF=26A VGS=0V Tch=25°C
IF=26A VGS=0V
-di/dt=100A/µs _Tch=25°C
Min.
120
3.0
6
Typ.
63
12
760
170
11
13
5
20
7.5
26
12
7
1.00
130
0.7
Max. Units
V
5.0 V
25
µA
250
µA
100
nA
78
mΩ
S
1140
pF
255
17
20
ns
7.5
30
11
39
nC
18
11
1.50 _V
ns
µC
Thermal characteristics
Item
Thermal resistance
Symbol
Rth(ch-c)
Rth(ch-a)
Test Conditions
channel to case
channel to ambient
Min. Typ.
Max. Units
3.378 °C/W
58
°C/W
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