2SD1588 Datasheet, PDF (1/1 Pages) NEC – NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING

Power Transistors
2SD1588
Silicon NPN Transistors
www.jmnic.com
Features
With TO-220Fa package
Low frequency power amplifiers and low-speed switching
Complement to type 2SB1097
Absolute Maximum Ratings Tc=25
SYMBOL
V_CBO
V_CEO
V_EBO
I_C
I_CP
P_C
T_j
T_stg
PARAMETER
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector current-Pluse
Collector power dissipation
Junction temperature
Storage temperature
RATING
100
60
7
7
15
30
150
-55~150
UNIT
V
V
V
A
A
W
Electrical Characteristics Tc=25
SYMBOL
I_CBO
I_EBO
V_CBO
V_CEO
V_EBO
V_CE(sat-1)
V_CE(sat-2)
h_FE-1
h_FE-2
V_BE(sat-1)
V_BE(sat-2)
PARAMETER
Collector cut-off current
Emitter ut-off current
Collector-base breakdown voltage
Collector-emitter sustaining voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltages
Collector-emitter saturation voltages
Forward current transfer ratio
Forward current transfer ratio
Base-emitter saturation voltages
Base-emitter saturation voltages
CONDITIONS
V_CB=80V, I_E=0;
V_EB=5V, I_C=0
I_C=30mA; I_B=0
I_C=5A; I_B=0.5A
I_C=3A; V_CE=1V
I_C=5A; V_CE=1V
I_C=5A; I_B=0.5A
h_FE-1 Classifications
M
40-80
L
60-120
K
100-200
BCE
TO-220Fa
MIN TYP MAX UNIT
10
uA
10
uA
60
V
0.5
V
40
200
20
1.5
V
JMnic