 English |
|
|
|
|
|
|
|
| 2SC536 Datasheet, PDF (1/1 Pages) List of Unclassifed Manufacturers – TRANSISTOR (NPN) | |||
| |||
|
2SC536
2SC536 TRANSISTOR (NPN)
FEATURES
Power dissipation
PCM:
400 mW (Tamb=25â)
Collector current
ICM:
100 mA
Collector-base voltage
V(BR)CBO:
40 V
Operating and storage junction temperature range
TJ, Tstg: -55â to +150â
TO-92
1. EMITTER
2. COLLECTOR
3. BASE
123
ELECTRICAL CHARACTERISTICS (Tamb=25â unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-Base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE
VCE(sat)
fT
Cob
Test conditions
Ic=100µA, IE=0
Ic=1mA, IB=0
IE=100µA, IC=0
VCB=35V, IE=0
VEB=4V, IC=0
VCE=6V, IC=1mA
IC=50mA, IB=5mA
VCE=6V, IC=1mA
VCE=6V, f=1MHz
MIN
TYP
40
30
5
60
100
3.5
MAX
UNIT
V
V
V
1
µA
1
µA
960
0.5
V
MHz
pF
CLASSIFICATION OF hFE
Rank
D
Range
60-120
E
100-200
F
160-320
G
280-560
H
480-960
WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:wej@yongerjia.com
|
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese