2SC1590 Datasheet, PDF (1/2 Pages) List of Unclassifed Manufacturers – Silicon NPN Transistor RF Power Output

2SC1590
Silicon NPN Transistor
RF Power Output
The 2SC1590 is a silicon NPN epitaxial planer type
transistor designed for 136-174MHz RF power amplifiers
on VHF band mobile radio applications.
WINTransceiver
BEC
Features:
High Power Gain: G_pe >/= 10dB (V_CC = 13.5V, P_O = 6W, f = 175MHz)
Ability to Withstand more than 20:1 VSWR Load when Operated at:
V_CC = 15.2V, P_O = 6W, f = 175MHz
Application:
4 to 5 Watt Output Power Amplifier Applications in VHF Band
Absolute Maximum Ratings: (T_C = +25°C unless otherwise specified)
Collector-Emitter Voltage (R_BE = Infinity), V_CEO
17V
Collector-Base Voltage, V_CBO
35V
Emitter-Base Voltage, V_EBO
4V
Collector Current, I_C
12A
Collector Power Dissipation (T_A = +25°C), P_D
1.5W
Collector Power Dissipation (T_C = +50°C), P_D
12.5W
Operating Junction Temperature, T_J
+150°C
Storage Temperature Range, T_stg
-55° to +150°C
Thermal Resistance, Junction-to-Case, R_thJC
10°C/W
Thermal Resistance, Junction-to-Ambient, R_thJA
83°C/W
Electrical Characteristics: (T_C = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Collector-Base Breakdown Voltage V_(BR)CBO I_C = 10mA, I_E = 0
Collector-Emitter Breakdown
Voltage
V_(BR)CEO I_C = 50mA, R_BE = Infinity
35 - - V
17 - - V
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Forward Current Gain
Power Output
Collector Efficiency
V_(BR)EBO I_E = 5mA, I_C = 0
I_CBO V_CB = 25V I_E = 0
I_EBO V_EB = 3V, I_C = 0
h_FE V_CE = 10V, I_C = 100mA, Note 1
P_O V_CC = 13.5V, P_in = 600mW, f =
175MHz
4- -V
- - 500 µA
- - 500 µA
10 50 180
67 -W
60 70 - %