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| 2SC1306 Datasheet, PDF (1/2 Pages) List of Unclassifed Manufacturers – Silicon NPN Transistor Final RF Power Output | |||
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2SC1306
Silicon NPN Transistor
Final RF Power Output
Description:
The 2SC1306 is a silicon NPN transistor in a TO220 type
case designed for use in high power output amplifier
stages such as citizen band communications equipment.
WINTransceiver
BCE
Absolute Maximum Ratings: (TC = +25°C unless otherwise specified)
Collector-Emitter Voltage (RBE = 150 Ohm), VCER
75V
Collector-Base Voltage, VCBO
80V
Emitter-Base Voltage, VEBO
5V
Collector Current, IC
Continuous
3A
Peak
5A
Collector Power Dissipation (TA = +25°C), PD
Collector Power Dissipation (TC = +50°C), PD
Operating Junction Temperature, TJ
Storage Temperature Range, Tstg
1.2W
10W
+150°C
-55° to +150°C
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain-Bandwidth Product
Output Capacitance
Power Output
Collector Efficiency
V(BR)CBO IC = 100µA, IB = 0
V(BR)CER IC = 1mA, RBE = 150 Ohm
V(BR)EBO IE = 100µA, IC = 0
ICBO VCB = 40V IE = 0
IEBO VEB = 4V, IC = 0
hFE VCE = 5V, IC = 0.5A
VCE(sat) IC = 1A, IB = 0.1A
VBE(sat) IC = 1A, IB = 0.1A
fT VCE = 10V, IC = 0.1A
Cob VCB = 10V, f = 1MHz
PO VCC = 12V, Pin = 0.2W, f = 27MHz
80 - - V
75 - - V
5- - V
- - 10 µA
- - 10 µA
25 - 200
- 0.15 0.60 V
- 0.9 1.2 V
100 150 - MHz
25 - -
4.0 - - W
60 - - %
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