2SC1030 Datasheet, PDF (1/1 Pages) List of Unclassifed Manufacturers – SILICON NPN TRASISTORS

Power Transistors
2SC1030
Silicon NPN Transistors
Features
With TO-3 package
Low frequency power amplifications
Absolute Maximum Ratings Tc=25
SYMBOL
V_CBO
V_CEO
V_EBO
I_C
P_D
T_j
T_stg
PARAMETER
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current-Continuous
Total Power Dissipation@TC=25
Junction temperature
Storage temperature
RATING
150
80
6
6
50
200
-55~200
UNIT
V
V
V
A
W
Electrical Characteristics Tc=25
SYMBOL
V_CEO
V_CER
I_CEO
I_EBO
I_CBO
V_EBO
V_CE(sat-1)
V_CE(sat-2)
V_CE(sat-3)
h_FE-1
h_FE-2
h_FE-3
V_BE(on)
f_T
h_fe
PARAMETER
Collector-Emitter Sustaining Voltage
Collector-Emitter Sustaining Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector Cutoff Current
Base-emitter breakdown voltage
Collector-emitter saturation voltages
Collector-emitter saturation voltages
Collector-emitter saturation voltages
Forward current transfer ratio
Forward current transfer ratio
Forward current transfer ratio
Base-emitter On voltages
Current Gain-Bandwidth Product
Small-Signal Current Gain
CONDITIONS
I_C=0.2A; I_B=0
V_CE=30V; I_B=0
V_EB=6V; I_C=0
V_CB=30V; I_E=0
I_C=5.0A; I_B=1.0A
I_C=1A; V_CE=5V
I_C=5A; V_CE=5V
I_C=1A; V_CE=5V
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1B 2E 3C
TO-3
MIN TYP MAX UNIT
80
V
2.0
mA
1.0
mA
1.0
mA
1.5
V
35
200
22
10
MHz
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