2SC1008 Datasheet, PDF (1/3 Pages) List of Unclassifed Manufacturers – TRANSISTOR NPN

DONG GUAN SHI HUA YUAN ELECTRON CO.,LTD.
TEL [phone] FEX 86-769-5316189
2SC1008 TRANSISTOR NPN
FEATURES
Power dissipation
P_CM : 0.8
Collector current
W Tamb=25
I_CM : 0.7
A
Collector-base voltage
V_(BR)CBO : 80
V
Operating and storage junction temperature range
T_J T_stg: -55 to +150
TO 92
1.EMITTER
2. BASE
3. COLLECTOR
123
ELECTRICAL CHARACTERISTICS Tamb=25
Parameter
Symbol
unless otherwise specified
Test conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V(BR)CBO
Ic= 100 A IE=0
80
V
Collector-emitter breakdown voltage V(BR)CEO IC= 10mA , IB=0
60
V
Emitter-base breakdown voltage
V(BR)EBO
IE= 10 A IC=0
8
V
Collector cut-off current
ICBO
VCB=60 V , IE=0
0.1
A
Emitter cut-off current
IEBO
VEB= 5 V , IC=0
0.1
A
DC current gain
hFE
VCE= 2 V, IC=50m A
40
400
Collector-emitter saturation voltage
VCE(sat)
IC= 500mA, IB=50 mA
0.4
V
Base-emitter saturation voltage
VBE(sat)
IC=500mA, IB=50m A
1.1
V
Transition frequency
fT
VCE=10V, IC= 50mA
30
MHz
CLASSIFICATION OF hFE
Rank
Range
R
40-80
O
70-140
Y
120-240
G
200-400