2SA1235A Datasheet, PDF (1/2 Pages) List of Unclassifed Manufacturers – PNP TRANSISTOR

DONG GUAN SHI HUA YUAN ELECTRON CO.,LTD.
TEL [phone] FEX 86-769-5316189
2SA1235A TRANSISTOR PNP
FEATURES
SOT 23
1. BASE
2. EMITTER
3. COLLECTOR
Power dissipation
P_CM : 0.2
Collector current
W Tamb=25
I_CM: -0.2
A
Collector-base voltage
V _{(BR) CBO}: -60
V
Operating and storage junction temperature range
T_J T_stg: -55 to +150
Unit : mm
ELECTRICAL CHARACTERISTICS Tamb=25
Parameter
Symbol
unless otherwise specified
Test conditions
MIN
Collector-base breakdown voltage
V(BR) CBO _{IC = -100 A IE=0}
-60
Collector-emitter breakdown voltage
V(BR) CEO _{IC = -100 A IB=0}
-50
Emitter-base breakdown voltage
V(BR)EBO _{IE= -100 A IC=0}
-6
Collector cut-off current
ICBO
VCB= -60 V, IE =0
Emitter cut-off current
IEBO
VEB= -6V, IC =0
DC current gain
hFE 1 VCE= -6V, IC= -1mA
150
hFE 2 VCE= -6V, IC = -0.1mA
90
Collector-emitter saturation voltage
VCE (sat) IC=-100 mA, IB= -10mA
Base-emitter saturation voltage
VBE (sat) IC= -100mA, IB= -10mA
Transition frequency
Collector output capacitance
Noise figure
fT
VCE= -6V, IC = -10mA
180
C_{ob VCE=-6V IE=0 f=1MHz}
NF
VCE=-6 V
RG=10K?
IE=0.3mA, f=100Hz
MAX UNIT
V
V
V
-0.1
A
-0.1
A
500
-0.3
V
-1
V
MHz
5
dB
20 dB
CLASSIFICATION OF hFE ₍₁₎
Rank
E
Range
150~300
Marking
M •E
F
250~500
M •F