2SA1020 Datasheet, PDF (1/1 Pages) Toshiba Semiconductor – TRANSISTOR (POWER AMPLIFIER APPLICATIONS)

Transys
Electronics
LIMITED
TO-92MOD Plastic-Encapsulated Transistors
2SA1020 TRANSISTOR (PNP)
TO-92MOD
FEATURES
Power dissipation
P_CM : 900 mW (Tamb=25℃)
Collector current
I_CM : -2 A
Collector-base voltage
V_(BR)CBO : -50 V
Operating and storage junction temperature range
T_J, T_stg: -55℃ to +150℃
1. EMITTER
2. COLLECTOR
3. BASE
123
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
VCE(sat)
VBE(sat)
fT
Test conditions
Ic=-100µA, IE=0
Ic=-1mA, IB=0
IE=-100 µA, IC=0
VCB=-50 V, IE=0
VEB=-5 V, IC=0
VCE=-2 V, IC=-500 A
IC=-1A, IB=-50 mA
IC=-1 A, IB=-50 mA
VCE=-2 V, IC=-500 mA
MIN TYP MAX UNIT
-50
V
-50
V
-5
V
-1
µA
-1
µA
70
240
-0.5 V
-1.2 V
100
MHz
CLASSIFICATION OF h_FE(1)
Rank
Range
O
70-140
Y
120-240