2N7000P Datasheet, PDF (1/1 Pages) List of Unclassifed Manufacturers – N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 2- MARCH 94
FEATURES
* 60 Volt VcEo
*R _{0S(0.) = 5 ‘2}
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Drain-Source Voltage
Continuous Drain Current at Tamb=250C
Pulsed Drain Current–-
Gate-Source Voltage
Power Dissipation at Tamb=250C
Operating and Storage Temperature
——
Range
-. —. —-..-...,, ...— “,.. . . .-
2N7000P
I
D
G_s
v
lJ&h!sJ
SYMBOL
VALUE
~
UNIT
‘DS
—
ID
——+—
lDM
60
200
—
’500
‘–
v
mA
mA
‘GS
P_tot
Ti:T~tg
i 40
—
-1
---–- 2A.
-55to +150 \
v
mW
~
“c
PARAMETER
Drain-Source
Voltage
Breakdown
Gate-Source Threshold Voltage
—-
—
Gate-Body Leakage
Zero Gate Voltege Drain Current
—- ———.
— .——
On-State Drain Curren~t(~1)
——-.—
—.— .——
Static Drain-Source On-State
Voltage (1)
Static Drain-Source On-State
Resistance (1)
SYMBOL
BVDss
MIN.
60
‘GS(th)
lGSS
lD~s
_ ^0.8
ID(m)
q+f ₇₅
‘DS(on)
RDs& ~
MAX. UNIT CONDITIONS.
v
ID=l OIA, VGsOV
.—
3
v
lD=lmA, VD= VGs
10
nA-- vG-@ ‘“ 15V, vD~=ov
1
UA
VD~48V, VG~O
1
mA VDs48V, VG~OV, T=125°C(2)
—
mA VDSIOV, VGF4.5V
2.5
V - VGs.=10V,lD.500mA
0.4
v
5T
‘; “- ;;~;;;$;%--–
1’
input Capacitance (2)
——. .———. ——
__, _ _{AL-P–E.-.;}
Common Source Output
Capacitance (2_—) _{. —-—}
c _0ss
1
~
I I ²⁵
pF
VD-725V, VGs:OV, f= 1MHz
-4
‘Reve;se Transfer Capacitance
TurmOn Time (2)(3)
Turn-Off Time (2)(3)
(2) c,,,
‘(on)
Voff)
5
pF
— --–—
—— ———
10
ns \ VDD=15V, lD=500mA
~ Rg=25Q, RL=25Q
10
ns
I
) Measured under pulsed conditions. Width=300ps. Duty cycle <2% (2) Sample test.
1)Switching times measured with 50Q source impedance and <5ns rise time on a pulse generator
3-13